UN521T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UN521T
Código: EZ
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT323
SC70
Búsqueda de reemplazo de transistor bipolar UN521T
UN521T
Datasheet (PDF)
9.1. Size:230K motorola
mun5211t1rev2.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5211T1/D Bias Resistor Transistor MUN5211T1 NPN Silicon Surface Mount Transistor with SERIES Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a sing
9.2. Size:179K motorola
mun5211d.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MUN5211DW1T1/D MUN5211DW1T1 Dual Bias Resistor Transistors SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a ba
9.3. Size:89K onsemi
nsvmun5215dw1t1g.pdf 

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with
9.4. Size:191K onsemi
nsvmun5212dw1t1g.pdf 

MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with SOT-363 a monolithic bias network consisting of two resistors; a series base CASE 419B STYLE 1 resistor and a base-emitter resistor. The
9.5. Size:89K onsemi
nsvmun5211dw1t3g.pdf 

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit
9.6. Size:90K onsemi
nsvmun5214dw1t3g.pdf 

MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit
9.8. Size:89K onsemi
nsvmun5213dw1t3g.pdf 

MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 47 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit
9.10. Size:135K onsemi
mun2214 mmun2214l mun5214 dtc114ye dtc114ym3 nsbc114yf3.pdf 

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT
9.11. Size:435K onsemi
mun5211t1-d.pdf 

MUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series ba
9.12. Size:210K onsemi
mun5211dw1t1.pdf 

MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http //onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are (3) (2) (1) desi
9.13. Size:430K panasonic
unr521x un521x series.pdf 

Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape packing and magazine packing (
9.15. Size:553K wietron
mun5211dw.pdf 

MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 5 4 6 5 NPN Silicon 4 R1 R 2 Q 2 1 P b Lead(Pb)-Free 2 R Q1 2 3 R 1 SOT-363(SC-88) 1 2 3 NPN+NPN Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 50 Vdc CEO Collector-Base Voltage VCBO 50 Vdc Collector Current IC 100 mAdc Thermal Characteristics Characteristics(1) Symbol Max Unit (2
9.16. Size:436K wietron
mun5211.pdf 

MUN5211 Series NPN Silicon Bias Resistor Transistor 3 R1 P b Lead(Pb)-Free 1 R2 2 SOT-323(SC-70) ( T =25 C unless otherwise noted) Maximum Ratings A Rating Symbol Value Unit Collector-Emitter Voltage V 50 CEO Vdc Vdc Collector-Base Voltage VCBO 50 Collector Current-Continuous IC mAdc 100 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Bo
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History: SYL2246
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