ZT114 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZT114
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO46

Búsqueda de reemplazo de transistor bipolar ZT114

ZT114 Datasheet (PDF)

0.1. Size:522K diodes
fzt1147a.pdf

Green FZT1147A 12V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features and Benefits Mechanical Data BVCEO > -12V Case: SOT223 Maximum Continuous Current IC = -5A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Peak Pulse Current IC = -20A Moisture Sensitivity: Level 1 per J-STD-020 High Gai

0.2. Size:560K diodes
fzt1149a.pdf

FZT1149A Green25V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features and Benefits Mechanical Data BVCEO > -25V Case: SOT223 Maximum Continuous Current IC = -4A Case Material: Molded Plastic, Green Molding Compound; Peak Pulse Current IC = -10A UL Flammability Classification Rating 94V-0 High Gain Holds Up hFE > 195 @IC = -2A Moisture Sensiti

0.3. Size:895K kexin
kzt1149a.pdf

SMD Type TransistorsPNP TransistorsFZT1149A (KZT1149A)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-4A Collector Emitter Voltage VCEO=-25V Low Saturation voltage1 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol

0.4. Size:1288K kexin
fzt1149a.pdf