ZT95 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CZT953www.centralsemi.comSURFACE MOUNT SILICONHIGH CURRENTDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CZT953 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM R

CZT955www.centralsemi.comSURFACE MOUNT SILICONHIGH CURRENTDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CZT955 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM R

GreenFZT958 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data Case: SOT223 BVCEO > -400V Case Material: Molded Plastic. Green Molding Compound. UL IC = -0.5A High Continuous Collector Current Flammability Rating 94V-0 ICM = -1.5A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage VCE(SAT

DZT951 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT851) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data Case: SOT-223 COLLECT

DZT953DZT953 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT853) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Dev

A Product Line ofDiodes IncorporatedGreen FZT953 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

FZT955 Green 140V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -140V Case: SOT223 IC = -4A High Continuous Collector Current Case material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

SOT223 PNP SILICON PLANAR HIGH CURRENTFZT955(HIGH PERFORMANCE) TRANSISTORSFZT956ISSUE 3 MARCH 2005FEATURES* 4 Amps continuous current (10 Amps peak current)C* Very low saturation voltages* Excellent gain characteristics specified up to 3 AmpsEPARTMARKING DETAILS DEVICE TYPE IN FULLCCOMPLEMENTARY TYPES FZT955 - FZT855BFZT956 - N/AABSOLUTE MAXIMUM RATIN

FZT956 Green 200V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -200V Case: SOT223 IC = -2A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. IC = -5A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

DZT955 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data

SOT223 PNP SILICON PLANAR HIGH CURRENTFZT957(HIGH PERFORMANCE) TRANSISTORSFZT958ISSUE 3 - JANUARY 1996 T i C V I i I II i i i i i E T T T T8 C T 8 B T I D T I D VI T I ABSOLUTE MAXIMUM RATINGS. T T T 8 IT II V I V V II i V I V V i V I V V I I i II I Di i i T 3W i T T T T i i i i i i i i I i I i i i 8 FZT957ELECTRICAL CHARAC

FZT951 Green 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

M C CRMicro Commercial Components Micro Commercial Components20736 Marilla Street ChatsworthCA 91311 FZT955Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designatesRoHS Compliant. See ordering information)PNP High Voltage Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Le

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate TransistorsFZT955 TRANSISTOR (PNP)SOT-223 FEATURES High Voltage Low saturation voltages1. BASE2. COLLECTORMARKING: ZT9553. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -180 V CBOV Collector-Emitter Voltage -140 V

SMD Type TransistorsPNP TransistorsFZT958 (KZT958)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Col

SMD Type TransistorsPNP TransistorsFZT957 (KZT957)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-300V1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

SMD Type TransistorsPNP TransistorsFZT951 (KZT951)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to FZT8511 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

SMD Type TransistorsPNP TransistorsFZT953 (KZT953)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Complementary to FZT8531 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

SMD Type TransistorsPNP TransistorsFZT955 (KZT955)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-4A Collector Emitter Voltage VCEO=-140V Very low saturation voltages1 2 3 Complementary to FZT8550.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute

SMD Type TransistorsPNP TransistorsFZT956 (KZT956)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-200V Very low saturation voltages1 2 3 Excellent gain characteristics specified up to 3 A0.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ)

SMD Type TransistorsPNP TransistorsFZT951 (KZT951)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to FZT8511 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

SMD Type TransistorsPNP TransistorsFZT953 (KZT953)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Complementary to FZT8531 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

JIEJIE MICROELECTRONICS CO. , Ltd JZT955 Rev.1.0 MAIN FEATURES FEATURE Symbol Value Unit Low collector-emitter saturation voltage I -4 A High continuous collector current CI -10 A CMAPPLIACTIONS V -180 V CBO Linear regulator V -140 V CEO MOSFET drivers Audio amplifiers.etc. V -7 V EBOC(2)B(1)123E(3)SOT-223ABSOLUTE MAXIMUM RATINGS Para

www.msksemi.comFZT955-MSSemiconductor CompianceSemiconductor CompiancePNP TransistorsSOT-223 Features11. BASE Collector Current Capability IC=-4A22. COLLECTOR Collector Emitter Voltage VCEO=-140V33. EMITTER Very low saturation voltages Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em