ZT95 Todos los transistores

 0.1. Size:745K  central
 czt953.pdf

CZT953 www.centralsemi.com SURFACE MOUNT SILICON HIGH CURRENT DESCRIPTION PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CZT953 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM R

 0.2. Size:973K  central
 czt955.pdf

CZT955 www.centralsemi.com SURFACE MOUNT SILICON HIGH CURRENT DESCRIPTION PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CZT955 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM R

 0.3. Size:711K  diodes
 fzt958.pdf

Green FZT958 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data Case SOT223 BVCEO > -400V Case Material Molded Plastic. Green Molding Compound. UL IC = -0.5A High Continuous Collector Current Flammability Rating 94V-0 ICM = -1.5A Peak Pulse Current Moisture Sensitivity Level 1 per J-STD-020 Low Saturation Voltage VCE(SAT

 0.4. Size:178K  diodes
 dzt951.pdf

DZT951 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT851) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data Case SOT-223 COLLECT

 0.5. Size:169K  diodes
 dzt953.pdf

DZT953 DZT953 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT853) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Dev

 0.6. Size:309K  diodes
 fzt953.pdf

A Product Line of Diodes Incorporated Green FZT953 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case SOT223 IC = -5A High Continuous Collector Current Case Material Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 0.7. Size:609K  diodes
 fzt955.pdf

FZT955 Green 140V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -140V Case SOT223 IC = -4A High Continuous Collector Current Case material Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 0.8. Size:229K  diodes
 fzt955 fzt956.pdf

SOT223 PNP SILICON PLANAR HIGH CURRENT FZT955 (HIGH PERFORMANCE) TRANSISTORS FZT956 ISSUE 3 MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) C * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps E PARTMARKING DETAILS DEVICE TYPE IN FULL C COMPLEMENTARY TYPES FZT955 - FZT855 B FZT956 - N/A ABSOLUTE MAXIMUM RATIN

 0.9. Size:449K  diodes
 fzt956.pdf

FZT956 Green 200V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -200V Case SOT223 IC = -2A High Continuous Collector Current Case Material Molded Plastic. Green Molding Compound. IC = -5A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 0.10. Size:189K  diodes
 dzt955.pdf

DZT955 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data

 0.11. Size:94K  diodes
 fzt957 fzt958.pdf

SOT223 PNP SILICON PLANAR HIGH CURRENT FZT957 (HIGH PERFORMANCE) TRANSISTORS FZT958 ISSUE 3 - JANUARY 1996 T i C V I i I II i i i i i E T T T T8 C T 8 B T I D T I D VI T I ABSOLUTE MAXIMUM RATINGS. T T T 8 IT II V I V V II i V I V V i V I V V I I i II I Di i i T 3W i T T T T i i i i i i i i I i I i i i 8 FZT957 ELECTRICAL CHARAC

 0.12. Size:531K  diodes
 fzt951.pdf

FZT951 Green 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V Case SOT223 IC = -5A High Continuous Collector Current Case Material Molded Plastic. Green Molding Compound. ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 0.13. Size:635K  mcc
 fzt955.pdf

M C C R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 FZT955 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP High Voltage Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisture Sensitivity Le

 0.14. Size:772K  jiangsu
 fzt955.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate Transistors FZT955 TRANSISTOR (PNP) SOT-223 FEATURES High Voltage Low saturation voltages 1. BASE 2. COLLECTOR MARKING ZT955 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -180 V CBO V Collector-Emitter Voltage -140 V

 0.15. Size:1091K  kexin
 fzt958.pdf

SMD Type Transistors PNP Transistors FZT958 (KZT958) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base 2.Collector 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Col

 0.16. Size:1253K  kexin
 fzt957.pdf

SMD Type Transistors PNP Transistors FZT957 (KZT957) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-300V 1 2 3 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base 2.Collector 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

 0.17. Size:776K  kexin
 kzt951.pdf

SMD Type Transistors PNP Transistors FZT951 (KZT951) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to FZT851 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati

 0.18. Size:1132K  kexin
 fzt953.pdf

SMD Type Transistors PNP Transistors FZT953 (KZT953) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Complementary to FZT853 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

 0.19. Size:1175K  kexin
 fzt955.pdf

SMD Type Transistors PNP Transistors FZT955 (KZT955) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=-4A Collector Emitter Voltage VCEO=-140V Very low saturation voltages 1 2 3 Complementary to FZT855 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base 2.Collector 3.Emitter 4.60 (typ) 4.Collector Absolute

 0.20. Size:1118K  kexin
 fzt956.pdf

SMD Type Transistors PNP Transistors FZT956 (KZT956) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-200V Very low saturation voltages 1 2 3 Excellent gain characteristics specified up to 3 A 0.250 2.30 (typ) 0.84 (max) Gauge Plane 0.66 (min) 1.Base 2.Collector 3.Emitter 4.60 (typ)

 0.21. Size:1075K  kexin
 fzt951.pdf

SMD Type Transistors PNP Transistors FZT951 (KZT951) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to FZT851 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati

 0.22. Size:809K  kexin
 kzt953.pdf

SMD Type Transistors PNP Transistors FZT953 (KZT953) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Complementary to FZT853 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

 0.23. Size:283K  jiejie micro
 jzt955.pdf

JIEJIE MICROELECTRONICS CO. , Ltd JZT955 Rev.1.0 MAIN FEATURES FEATURE Symbol Value Unit Low collector-emitter saturation voltage I -4 A High continuous collector current C I -10 A CM APPLIACTIONS V -180 V CBO Linear regulator V -140 V CEO MOSFET drivers Audio amplifiers.etc. V -7 V EBO C(2) B(1) 1 2 3 E(3) SOT-223 ABSOLUTE MAXIMUM RATINGS Para

 0.24. Size:3820K  msksemi
 fzt955-ms.pdf

www.msksemi.com FZT955-MS Semiconductor Compiance Semiconductor Compiance PNP Transistors SOT-223 Features 1 1. BASE Collector Current Capability IC=-4A 2 2. COLLECTOR Collector Emitter Voltage VCEO=-140V 3 3. EMITTER Very low saturation voltages Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em