Биполярный транзистор ZT95
Даташит. Аналоги
Наименование производителя: ZT95
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 60
MHz
Ёмкость коллекторного перехода (Cc): 15
pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
TO5
- подбор биполярного транзистора по параметрам
ZT95
Datasheet (PDF)
0.1. Size:745K central
czt953.pdf 

CZT953www.centralsemi.comSURFACE MOUNT SILICONHIGH CURRENTDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CZT953 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM R
0.2. Size:973K central
czt955.pdf 

CZT955www.centralsemi.comSURFACE MOUNT SILICONHIGH CURRENTDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CZT955 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM R
0.3. Size:711K diodes
fzt958.pdf 

GreenFZT958 400V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data Case: SOT223 BVCEO > -400V Case Material: Molded Plastic. Green Molding Compound. UL IC = -0.5A High Continuous Collector Current Flammability Rating 94V-0 ICM = -1.5A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage VCE(SAT
0.4. Size:178K diodes
dzt951.pdf 

DZT951 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT851) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data Case: SOT-223 COLLECT
0.5. Size:169K diodes
dzt953.pdf 

DZT953DZT953 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Complementary NPN Type Available (DZT853) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Dev
0.6. Size:309K diodes
fzt953.pdf 

A Product Line ofDiodes IncorporatedGreen FZT953 100V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -100V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)
0.7. Size:609K diodes
fzt955.pdf 

FZT955 Green 140V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -140V Case: SOT223 IC = -4A High Continuous Collector Current Case material: Molded Plastic. Green Molding Compound; ICM = -10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)
0.8. Size:229K diodes
fzt955 fzt956.pdf 

SOT223 PNP SILICON PLANAR HIGH CURRENTFZT955(HIGH PERFORMANCE) TRANSISTORSFZT956ISSUE 3 MARCH 2005FEATURES* 4 Amps continuous current (10 Amps peak current)C* Very low saturation voltages* Excellent gain characteristics specified up to 3 AmpsEPARTMARKING DETAILS DEVICE TYPE IN FULLCCOMPLEMENTARY TYPES FZT955 - FZT855BFZT956 - N/AABSOLUTE MAXIMUM RATIN
0.9. Size:449K diodes
fzt956.pdf 

FZT956 Green 200V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -200V Case: SOT223 IC = -2A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. IC = -5A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
0.10. Size:189K diodes
dzt955.pdf 

DZT955 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) SOT-223 Mechanical Data
0.11. Size:94K diodes
fzt957 fzt958.pdf 

SOT223 PNP SILICON PLANAR HIGH CURRENTFZT957(HIGH PERFORMANCE) TRANSISTORSFZT958ISSUE 3 - JANUARY 1996 T i C V I i I II i i i i i E T T T T8 C T 8 B T I D T I D VI T I ABSOLUTE MAXIMUM RATINGS. T T T 8 IT II V I V V II i V I V V i V I V V I I i II I Di i i T 3W i T T T T i i i i i i i i I i I i i i 8 FZT957ELECTRICAL CHARAC
0.12. Size:531K diodes
fzt951.pdf 

FZT951 Green 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -60V Case: SOT223 IC = -5A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = -15A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)
0.13. Size:635K mcc
fzt955.pdf 

M C CRMicro Commercial Components Micro Commercial Components20736 Marilla Street ChatsworthCA 91311 FZT955Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designatesRoHS Compliant. See ordering information)PNP High Voltage Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Le
0.14. Size:772K jiangsu
fzt955.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate TransistorsFZT955 TRANSISTOR (PNP)SOT-223 FEATURES High Voltage Low saturation voltages1. BASE2. COLLECTORMARKING: ZT9553. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -180 V CBOV Collector-Emitter Voltage -140 V
0.15. Size:1091K kexin
fzt958.pdf 

SMD Type TransistorsPNP TransistorsFZT958 (KZT958)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Col
0.16. Size:1253K kexin
fzt957.pdf 

SMD Type TransistorsPNP TransistorsFZT957 (KZT957)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-300V1 2 30.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec
0.17. Size:776K kexin
kzt951.pdf 

SMD Type TransistorsPNP TransistorsFZT951 (KZT951)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to FZT8511 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati
0.18. Size:1132K kexin
fzt953.pdf 

SMD Type TransistorsPNP TransistorsFZT953 (KZT953)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Complementary to FZT8531 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
0.19. Size:1175K kexin
fzt955.pdf 

SMD Type TransistorsPNP TransistorsFZT955 (KZT955)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-4A Collector Emitter Voltage VCEO=-140V Very low saturation voltages1 2 3 Complementary to FZT8550.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ) 4.Collector Absolute
0.20. Size:1118K kexin
fzt956.pdf 

SMD Type TransistorsPNP TransistorsFZT956 (KZT956)Unit:mmSOT-2236.500.23.000.1 Features4 Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-200V Very low saturation voltages1 2 3 Excellent gain characteristics specified up to 3 A0.2502.30 (typ)0.84 (max)Gauge Plane0.66 (min)1.Base 2.Collector3.Emitter4.60 (typ)
0.21. Size:1075K kexin
fzt951.pdf 

SMD Type TransistorsPNP TransistorsFZT951 (KZT951)Unit:mmSOT-2236.500.23.000.1 Features 4 Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Complementary to FZT8511 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati
0.22. Size:809K kexin
kzt953.pdf 

SMD Type TransistorsPNP TransistorsFZT953 (KZT953)Unit:mmSOT-2236.500.23.000.14 Features Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Complementary to FZT8531 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
0.23. Size:283K jiejie micro
jzt955.pdf 

JIEJIE MICROELECTRONICS CO. , Ltd JZT955 Rev.1.0 MAIN FEATURES FEATURE Symbol Value Unit Low collector-emitter saturation voltage I -4 A High continuous collector current CI -10 A CMAPPLIACTIONS V -180 V CBO Linear regulator V -140 V CEO MOSFET drivers Audio amplifiers.etc. V -7 V EBOC(2)B(1)123E(3)SOT-223ABSOLUTE MAXIMUM RATINGS Para
0.24. Size:3820K msksemi
fzt955-ms.pdf 

www.msksemi.comFZT955-MSSemiconductor CompianceSemiconductor CompiancePNP TransistorsSOT-223 Features11. BASE Collector Current Capability IC=-4A22. COLLECTOR Collector Emitter Voltage VCEO=-140V33. EMITTER Very low saturation voltages Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em
Другие транзисторы... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SD2499
, 2SA1805
, 2SA1805O
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.
History: ZT2369
| ECG99
| BFQ252A
| ZTX510K
| SC108
| PBLS1502Y
| BD213-45