2N5410 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5410
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 40 MHz
Capacitancia de salida (Cc): 150 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO59
Búsqueda de reemplazo de 2N5410
- Selecciónⓘ de transistores por parámetros
2N5410 datasheet
9.1. Size:51K philips
2n5415 2n5416 cnv 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (m
9.2. Size:51K philips
2n5415 2n5416.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors 1997 May 21 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (m
9.3. Size:45K st
2n5415 2n5416.pdf
2N5415 2N5416 SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching
9.4. Size:47K st
2n5415 2n5416 .pdf
2N5415 2N5416 SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching
9.5. Size:64K central
2n5415 2n5416 2.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.6. Size:934K no
2n5415u4.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.7. Size:934K no
2n5416ua.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.8. Size:934K no
2n5416u4.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.9. Size:934K no
2n5415ua.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.10. Size:934K no
2n5416s.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.11. Size:11K semelab
2n5414.pdf
2N5414 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 50V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
9.12. Size:11K semelab
2n5414cecc.pdf
2N5414CECC Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 50V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)
9.13. Size:140K cdil
2n5415 2n5416.pdf
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 UNITS VCEO Collector Emitter Voltage
9.14. Size:201K cdil
2n5415 16.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 UNITS VCEO Collector Emit
9.15. Size:111K china
3ca5416 2n5416.pdf
3CA5416(2N5416) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 350 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=280V 50 A ICEO VEB=150V 50 A IEBO VEB=6V 20 A IC=0.05A VCEsat 2.5 V IB=0.
9.16. Size:143K china
3ca5415 2n5415.pdf
3CA5415(2N5415) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 200 V V(BR)CEO ICE=0.1mA 200 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=175V 50 A ICEO VEB=150V 50 A IEBO VEB=4V 20 A IC=0.05A VCEsat 2.5 V IB=0.
Otros transistores... 2N5404
, 2N5405
, 2N5406
, 2N5407
, 2N5408
, 2N5409
, 2N540A
, 2N541
, A1013
, 2N5411
, 2N5411A
, 2N5412
, 2N5413
, 2N5414
, 2N5415
, 2N5415CSM4
, 2N5415S
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