2N5410 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5410
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO59
2N5410 Transistor Equivalent Substitute - Cross-Reference Search
2N5410 Datasheet (PDF)
9.1. 2n5415 2n5416 cnv 2.pdf 
Size:51K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
9.2. 2n5415 2n5416.pdf Size:51K _philips
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N5415; 2N5416PNP high-voltage transistors1997 May 21Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors 2N5415; 2N5416FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION High voltage (m
9.3. 2n5415 2n5416 .pdf Size:47K _st
2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
9.4. 2n5415 2n5416.pdf Size:45K _st
2N54152N5416SILICON PNP TRANSISTORS STMicroelectronics PREFERREDSALESTYPES PNP TRANSISTORSDESCRIPTION The 2N5415, 2N5416 are high voltage siliconepitaxial planar PNP transistors in Jedec TO-39metal case designed for use in consumer andindustrial line-operated applications.These devices are particularly suited as drivers inhigh-voltage low current inverters, switching
9.5. 2n5415 2n5416 2.pdf Size:64K _central
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9.6. 2n5416ua.pdf Size:934K _no
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.7. 2n5415ua.pdf Size:934K _no
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.8. 2n5415u4.pdf Size:934K _no
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.9. 2n5416s.pdf Size:934K _no
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.10. 2n5416u4.pdf Size:934K _no
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/485N completed by 10 September 2013. 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA
9.11. 2n5414cecc.pdf Size:11K _semelab
2N5414CECCDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 50V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
9.12. 2n5414.pdf Size:11K _semelab
2N5414Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 50V dia.IC = 2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
9.13. 2n5415 16.pdf Size:201K _cdil
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emit
9.14. 2n5415 2n5416.pdf Size:140K _cdil
Continental Device India LimitedAn ISO/TS16949 and ISO 9001 Certified CompanyPNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16TO-39Metal Can PackageHigh Speed Switching and Linear amplifier Appliances in Military,Industrial and Commercial Equipment.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N5415 2N5416 UNITSVCEOCollector Emitter Voltage
9.15. 3ca5415 2n5415.pdf Size:143K _china
3CA5415(2N5415) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 200 V V(BR)CEO ICE=0.1mA 200 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=175V 50 A ICEO VEB=150V 50 A IEBO VEB=4V 20 A IC=0.05A VCEsat 2.5 V IB=0.
9.16. 3ca5416 2n5416.pdf Size:111K _china
3CA5416(2N5416) PNP PCM TC=25 10 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 350 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=280V 50 A ICEO VEB=150V 50 A IEBO VEB=6V 20 A IC=0.05A VCEsat 2.5 V IB=0.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
