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2N5426 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5426

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 32 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hfe): 1000

Empaquetado / Estuche: TO9

Búsqueda de reemplazo de transistor bipolar 2N5426

 

2N5426 Datasheet (PDF)

5.1. 2n5428a.pdf Size:17K _upd

2N5426
2N5426

2N5428A MECHANICAL DATA MEDIUM POWER Dimensions in mm NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. Designed for switching and wide - band amplifier applications 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. TO66 Package. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) VCEO Co

5.2. 2n5427-29 2n5430.pdf Size:132K _mospec

2N5426
2N5426

A A A

 5.3. 2n5429.pdf Size:45K _inchange_semiconductor

2N5426
2N5426

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION ·Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

5.4. 2n5428.pdf Size:45K _inchange_semiconductor

2N5426
2N5426

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5428 DESCRIPTION ·Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

 5.5. 2n5427.pdf Size:45K _inchange_semiconductor

2N5426
2N5426

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5427 DESCRIPTION ·Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

Otros transistores... 2N542 , 2N5420 , 2N5421 , 2N5422 , 2N5423 , 2N5424 , 2N5424A , 2N5425 , BC556 , 2N5427 , 2N5428 , 2N5429 , 2N542A , 2N543 , 2N5430 , 2N5435 , 2N5436 .

 
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