All Transistors. 2N5426 Datasheet

 

2N5426 Datasheet and Replacement


   Type Designator: 2N5426
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 32 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO9
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2N5426 Datasheet (PDF)

 9.1. Size:132K  mospec
 2n5427-29 2n5430.pdf pdf_icon

2N5426

AAA

 9.2. Size:17K  semelab
 2n5428a.pdf pdf_icon

2N5426

2N5428AMECHANICAL DATAMEDIUM POWERDimensions in mmNPN SILICONTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.Designed for switching andwide - band amplifierapplications1.27 (0.050)4.83 (0.190) 1.91 (0.750)5.33 (0.210)9.14 (0.360)min.TO66 Package.ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated)VCEO Co

 9.3. Size:1285K  sprague
 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf pdf_icon

2N5426

 9.4. Size:45K  inchange semiconductor
 2n5429.pdf pdf_icon

2N5426

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5429 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2S116 | 2S176 | 2S104 | BC847AWT1 | 2N6131 | 2N5894 | 2N6106

Keywords - 2N5426 transistor datasheet

 2N5426 cross reference
 2N5426 equivalent finder
 2N5426 lookup
 2N5426 substitution
 2N5426 replacement

 

 
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