BFG505 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG505
Código: N33
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.018 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000 MHz
Capacitancia de salida (Cc): 0.3 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT143B
Búsqueda de reemplazo de transistor bipolar BFG505
BFG505 Datasheet (PDF)
bfg505 bfg505x 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D071BFG505; BFG505/XNPN 9 GHz wideband transistorsProduct specification 1998 Oct 02Supersedes data of September 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG505; BFG505/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG505 BFG505/X High transition freq
bfg505 x n.pdf
BFG505; BFG505/XNPN 9 GHz wideband transistorsRev. 04 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assho
bfg505w bfg505wx bfg505wxr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG505W; BFG505W/X;BFG505W/XRNPN 9 GHz wideband transistorsProduct specification 2000 Oct 30Supersedes data of 1998 Oct 02Philips Semiconductors Product specificationBFG505W; BFG505W/X;NPN 9 GHz wideband transistorsBFG505W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG505W N0page4 3 High trans
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
