BFG505 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG505
Código: N33
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.018 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 9000 MHz
Capacitancia de salida (Cc): 0.3 pF
Ganancia de corriente contínua (hFE): 60
Encapsulados: SOT143B
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BFG505 datasheet
bfg505 bfg505x 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification 1998 Oct 02 Supersedes data of September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG505 BFG505/X High transition freq
bfg505 x n.pdf
BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sho
bfg505w bfg505wx bfg505wxr 4.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors Product specification 2000 Oct 30 Supersedes data of 1998 Oct 02 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR FEATURES MARKING High power gain TYPE NUMBER CODE Low noise figure BFG505W N0 page 4 3 High trans
Otros transistores... BFG11 , BFG11-X , BFG11W-X , BFG21W , 2SB1366F-O , BFG31 , BFG403W , BFG425W , TIP41C , BFG505W , BFG520 , BFG520W , BFG590 , BFG590W , BFG591 , BFG480W , BFM505 .
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