BFG505 Specs and Replacement
Type Designator: BFG505
SMD Transistor Code: N33
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.018 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT143B
BFG505 Substitution
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BFG505 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification 1998 Oct 02 Supersedes data of September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG505 BFG505/X High transition freq... See More ⇒
BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sho... See More ⇒
bfg505w bfg505wx bfg505wxr 4.pdf ![]()
DISCRETE SEMICONDUCTORS DATA SHEET BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors Product specification 2000 Oct 30 Supersedes data of 1998 Oct 02 Philips Semiconductors Product specification BFG505W; BFG505W/X; NPN 9 GHz wideband transistors BFG505W/XR FEATURES MARKING High power gain TYPE NUMBER CODE Low noise figure BFG505W N0 page 4 3 High trans... See More ⇒
Detailed specifications: BFG11, BFG11-X, BFG11W-X, BFG21W, 2SB1366F-O, BFG31, BFG403W, BFG425W, TIP41C, BFG505W, BFG520, BFG520W, BFG590, BFG590W, BFG591, BFG480W, BFM505
Keywords - BFG505 pdf specs
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History: SBT3904F | STD1862
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