BFG505 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG505
SMD Transistor Code: N33
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.018 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT143B
BFG505 Transistor Equivalent Substitute - Cross-Reference Search
BFG505 Datasheet (PDF)
bfg505 bfg505x 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D071BFG505; BFG505/XNPN 9 GHz wideband transistorsProduct specification 1998 Oct 02Supersedes data of September 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG505; BFG505/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG505 BFG505/X High transition freq
bfg505 x n.pdf
BFG505; BFG505/XNPN 9 GHz wideband transistorsRev. 04 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assho
bfg505w bfg505wx bfg505wxr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG505W; BFG505W/X;BFG505W/XRNPN 9 GHz wideband transistorsProduct specification 2000 Oct 30Supersedes data of 1998 Oct 02Philips Semiconductors Product specificationBFG505W; BFG505W/X;NPN 9 GHz wideband transistorsBFG505W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG505W N0page4 3 High trans
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
