BFG505W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG505W
Código: N0
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.018 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9000 MHz
Capacitancia de salida (Cc): 0.3 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT343N
Búsqueda de reemplazo de transistor bipolar BFG505W
BFG505W Datasheet (PDF)
bfg505w bfg505wx bfg505wxr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG505W; BFG505W/X;BFG505W/XRNPN 9 GHz wideband transistorsProduct specification 2000 Oct 30Supersedes data of 1998 Oct 02Philips Semiconductors Product specificationBFG505W; BFG505W/X;NPN 9 GHz wideband transistorsBFG505W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG505W N0page4 3 High trans
bfg505 bfg505x 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D071BFG505; BFG505/XNPN 9 GHz wideband transistorsProduct specification 1998 Oct 02Supersedes data of September 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG505; BFG505/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG505 BFG505/X High transition freq
bfg505 x n.pdf
BFG505; BFG505/XNPN 9 GHz wideband transistorsRev. 04 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assho
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