BFG505W Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG505W
SMD Transistor Code: N0
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.018 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT343N
BFG505W Transistor Equivalent Substitute - Cross-Reference Search
BFG505W Datasheet (PDF)
bfg505w bfg505wx bfg505wxr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG505W; BFG505W/X;BFG505W/XRNPN 9 GHz wideband transistorsProduct specification 2000 Oct 30Supersedes data of 1998 Oct 02Philips Semiconductors Product specificationBFG505W; BFG505W/X;NPN 9 GHz wideband transistorsBFG505W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG505W N0page4 3 High trans
bfg505 bfg505x 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D071BFG505; BFG505/XNPN 9 GHz wideband transistorsProduct specification 1998 Oct 02Supersedes data of September 1995Philips Semiconductors Product specificationNPN 9 GHz wideband transistors BFG505; BFG505/XFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG505 BFG505/X High transition freq
bfg505 x n.pdf
BFG505; BFG505/XNPN 9 GHz wideband transistorsRev. 04 22 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assho
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
