BFQ131 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFQ131
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.9 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4000 MHz
Ganancia de corriente contínua (hFE): 25
Encapsulados: SOT54
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BFQ131 datasheet
bfq131 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFQ131 NPN video transistor 1995 Sep 26 Product specification File under Discrete Semiconductors, SC05 Philips Semiconductors Product specification NPN video transistor BFQ131 FEATURES DESCRIPTION Low output capacitance NPN silicon transistor in a 3-lead 1 plastic SOT54 package. 2 High dissipation 3 High gain bandwidth product. PI
bfq135 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFQ135 NPN 6.5 GHz wideband transistor 1997 Nov 07 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 FEATURES DESCRIPTION Optimum temperature profile and NPN wideband transistor in a 4-lead fpage 4 excellent reli
bfq136 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 DESCRIPTION PINNING NPN transistor in a four-lead PIN DESCRIPTION dual-emitter SOT122A envelope with page 4 1 collector a ceramic cap. All leads are
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