BFQ131 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFQ131
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.9 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4000 MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: SOT54
Búsqueda de reemplazo de BFQ131
BFQ131 Datasheet (PDF)
bfq131 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBFQ131NPN video transistor1995 Sep 26Product specificationFile under Discrete Semiconductors, SC05Philips Semiconductors Product specificationNPN video transistor BFQ131FEATURES DESCRIPTION Low output capacitance NPN silicon transistor in a 3-lead1plastic SOT54 package.2 High dissipation3 High gain bandwidth product.PI
bfq135 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBFQ135NPN 6.5 GHz wideband transistor1997 Nov 07Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 6.5 GHz wideband transistor BFQ135FEATURES DESCRIPTION Optimum temperature profile and NPN wideband transistor in a 4-leadfpage4excellent reli
bfq136 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBFQ136NPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ136DESCRIPTION PINNINGNPN transistor in a four-leadPIN DESCRIPTIONdual-emitter SOT122A envelope withpage 41 collectora ceramic cap. All leads are
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