BFQ131 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ131
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.9 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 4000 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT54
BFQ131 Transistor Equivalent Substitute - Cross-Reference Search
BFQ131 Datasheet (PDF)
bfq131 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ131NPN video transistor1995 Sep 26Product specificationFile under Discrete Semiconductors, SC05Philips Semiconductors Product specificationNPN video transistor BFQ131FEATURES DESCRIPTION Low output capacitance NPN silicon transistor in a 3-lead1plastic SOT54 package.2 High dissipation3 High gain bandwidth product.PI
bfq135 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ135NPN 6.5 GHz wideband transistor1997 Nov 07Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 6.5 GHz wideband transistor BFQ135FEATURES DESCRIPTION Optimum temperature profile and NPN wideband transistor in a 4-leadfpage4excellent reli
bfq136 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ136NPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ136DESCRIPTION PINNINGNPN transistor in a four-leadPIN DESCRIPTIONdual-emitter SOT122A envelope withpage 41 collectora ceramic cap. All leads are
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
