BFQ131 Specs and Replacement
Type Designator: BFQ131
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.9 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 4000 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT54
BFQ131 Substitution
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BFQ131 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFQ131 NPN video transistor 1995 Sep 26 Product specification File under Discrete Semiconductors, SC05 Philips Semiconductors Product specification NPN video transistor BFQ131 FEATURES DESCRIPTION Low output capacitance NPN silicon transistor in a 3-lead 1 plastic SOT54 package. 2 High dissipation 3 High gain bandwidth product. PI... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFQ135 NPN 6.5 GHz wideband transistor 1997 Nov 07 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 6.5 GHz wideband transistor BFQ135 FEATURES DESCRIPTION Optimum temperature profile and NPN wideband transistor in a 4-lead fpage 4 excellent reli... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFQ136 NPN 4 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ136 DESCRIPTION PINNING NPN transistor in a four-lead PIN DESCRIPTION dual-emitter SOT122A envelope with page 4 1 collector a ceramic cap. All leads are ... See More ⇒
Detailed specifications: BFG520, BFG520W, BFG590, BFG590W, BFG591, BFG480W, BFM505, BFM520, TIP41, BFQ151, BFQ166, BFQ256, BFQ256A, BFR520, BFR520T, BFS25A, BFS520
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