2N5435 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5435
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 120 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 60 A
Temperatura operativa máxima (Tj): 110 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.35 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de 2N5435
2N5435 datasheet
2n5432 2n5433 2n5434.pdf
2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 4 to 10 5 10 2.5 2N5433 3 to 9 7 10 2.5 2N5434 1 to 4 10 10 2.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2N5432
2n5430x.pdf
2N5430X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec
2n5430.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE
Otros transistores... 2N5425 , 2N5426 , 2N5427 , 2N5428 , 2N5429 , 2N542A , 2N543 , 2N5430 , BD136 , 2N5436 , 2N5437 , 2N5438 , 2N5439 , 2N543A , 2N544 , 2N5440 , 2N544-12 .
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