All Transistors. 2N5435 Datasheet

 

2N5435 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5435

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 60 A

Max. Operating Junction Temperature (Tj): 110 °C

Transition Frequency (ft): 0.35 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

2N5435 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5435 Datasheet (PDF)

9.1. 2n5432 2n5433 2n5434.pdf Size:51K _vishay

2N5435
2N5435

2N5432/5433/5434Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N5432 4 to 10 5 10 2.52N5433 3 to 9 7 10 2.52N5434 1 to 4 10 10 2.5FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N5432

9.2. 2n5427-29 2n5430.pdf Size:132K _mospec

2N5435
2N5435

AAA

 9.3. 2n5430x.pdf Size:11K _semelab

2N5435

2N5430XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec

9.4. 2n5430.pdf Size:45K _inchange_semiconductor

2N5435
2N5435

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

Datasheet: 2N5425 , 2N5426 , 2N5427 , 2N5428 , 2N5429 , 2N542A , 2N543 , 2N5430 , AC125 , 2N5436 , 2N5437 , 2N5438 , 2N5439 , 2N543A , 2N544 , 2N5440 , 2N544-12 .

 

 
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