2N5436 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5436

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 110 V

Tensión colector-emisor (Vce): 90 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 60 A

Temperatura operativa máxima (Tj): 110 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.35 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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2N5436 datasheet

 9.1. Size:51K  vishay
 2n5432 2n5433 2n5434.pdf pdf_icon

2N5436

2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 4 to 10 5 10 2.5 2N5433 3 to 9 7 10 2.5 2N5434 1 to 4 10 10 2.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2N5432

 9.2. Size:132K  mospec
 2n5427-29 2n5430.pdf pdf_icon

2N5436

A A A

 9.3. Size:11K  semelab
 2n5430x.pdf pdf_icon

2N5436

2N5430X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec

 9.4. Size:45K  inchange semiconductor
 2n5430.pdf pdf_icon

2N5436

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE

MOSTRAR MÁS

Otros transistores... 2N5426, 2N5427, 2N5428, 2N5429, 2N542A, 2N543, 2N5430, 2N5435, TIP120, 2N5437, 2N5438, 2N5439, 2N543A, 2N544, 2N5440, 2N544-12, 2N544-33