2N5436 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5436
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 110 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.35 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2N5436 Transistor Equivalent Substitute - Cross-Reference Search
2N5436 Datasheet (PDF)
2n5432 2n5433 2n5434.pdf
2N5432/5433/5434Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N5432 4 to 10 5 10 2.52N5433 3 to 9 7 10 2.52N5434 1 to 4 10 10 2.5FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N5432
2n5430x.pdf
2N5430XDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec
2n5430.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE
Datasheet: 2N5426 , 2N5427 , 2N5428 , 2N5429 , 2N542A , 2N543 , 2N5430 , 2N5435 , 2SC1740 , 2N5437 , 2N5438 , 2N5439 , 2N543A , 2N544 , 2N5440 , 2N544-12 , 2N544-33 .
