BU1506DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU1506DX
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 32 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 13.5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 47 pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: SOT186A
Búsqueda de reemplazo de transistor bipolar BU1506DX
BU1506DX Datasheet (PDF)
bu1506dx.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu1506dx.pdf
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isc Silicon NPN Power Transistor BU1506DXDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu1506df.pdf
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isc Silicon NPN Power Transistor BU1506DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu1507dx.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers and computer monitors. Features exceptional tole
bu1508dx.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
bu1507ax.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.Features exceptional tolerance to base drive and collecto
bu1508ax.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati
bu1507dx.pdf
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isc Silicon NPN Power Transistor BU1507DXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers and computer monitors.ABSOLUTE MAXIMUM RATIN
bu1508dx.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU1508DXDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu1508af.pdf
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isc Silicon NPN Power Transistor BU1508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
bu1507ax.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU1507AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers and computer monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL
bu1508ax.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU1508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
bu1508df.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU1508DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BU2525DW
History: BU2525DW
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Liste
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