BU1506DX Todos los transistores

 

BU1506DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU1506DX
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 32 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 13.5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 47 pF
   Ganancia de corriente contínua (hfe): 12
   Paquete / Cubierta: SOT186A
 

 Búsqueda de reemplazo de BU1506DX

   - Selección ⓘ de transistores por parámetros

 

BU1506DX Datasheet (PDF)

 ..1. Size:53K  philips
bu1506dx.pdf pdf_icon

BU1506DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1506DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

 ..2. Size:209K  inchange semiconductor
bu1506dx.pdf pdf_icon

BU1506DX

isc Silicon NPN Power Transistor BU1506DXDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =

 7.1. Size:215K  inchange semiconductor
bu1506df.pdf pdf_icon

BU1506DX

isc Silicon NPN Power Transistor BU1506DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =

 9.1. Size:46K  philips
bu1507dx.pdf pdf_icon

BU1506DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1507DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers and computer monitors. Features exceptional tole

Otros transistores... BLV897 , BLW30 , BLW97 , BRY39 , BRY56 , BRY56A , BRY61 , BRY62 , TIP127 , BU1507AX , BU1507DX , BU2507DF , BU2515AF , BU2515DF , BU2522DF , BU2522DX , BU2523DF .

History: TRRR38 | BUV98CV | GC522 | DTC113ZE

 

 
Back to Top

 


 
.