BU2507DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2507DF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 700 V
Tensión emisor-base (Veb): 13.5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 68 pF
Ganancia de corriente contínua (hfe): 14
Paquete / Cubierta: SOT199
Búsqueda de reemplazo de transistor bipolar BU2507DF
BU2507DF Datasheet (PDF)
bu2507df.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers and computer monitors. Features exceptional tole
bu2507df.pdf
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isc Silicon NPN Power Transistor BU2507DFDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcoluor TV receivers and computer monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV C
bu2507dx.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers and computer monitors. Features exceptional tole
bu2507dx.pdf
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isc Silicon NPN Power Transistor BU2507DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcoluor TV receivers and computer monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV C
bu2507af.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.Features exceptional tolerance to base drive and collecto
bu2507ax.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.Features exceptional tolerance to base drive and collecto
bu2507af.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2507AFDESCRIPTIONHigh Switching SpeedHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcoluor TV receivers and computer monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage V
bu2507ax.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2507AXDESCRIPTIONHigh Switching SpeedHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcoluor TV receivers and computer monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage V
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