BU2525DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2525DF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 13.5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 145 pF
Ganancia de corriente contínua (hfe): 11
Paquete / Cubierta: SOT199
Búsqueda de reemplazo de transistor bipolar BU2525DF
BU2525DF Datasheet (PDF)
bu2525df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2525df.pdf
isc Silicon NPN Power Transistor BU2525DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
bu2525dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2525dw 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M
bu2525dx.pdf
isc Silicon NPN Power Transistor BU2525DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits oflarge screen color TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
bu2525dw.pdf
isc Silicon NPN Power Transistor BU2525DWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
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