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BU2525DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2525DF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 13.5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 145 pF
   Ganancia de corriente contínua (hfe): 11
   Paquete / Cubierta: SOT199
 

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BU2525DF Datasheet (PDF)

 ..1. Size:56K  philips
bu2525df 1.pdf pdf_icon

BU2525DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT

 ..2. Size:213K  inchange semiconductor
bu2525df.pdf pdf_icon

BU2525DF

isc Silicon NPN Power Transistor BU2525DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =

 7.1. Size:57K  philips
bu2525dx 1.pdf pdf_icon

BU2525DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT

 7.2. Size:58K  philips
bu2525dw 1.pdf pdf_icon

BU2525DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M

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