BU2525DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2525DW
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 13.5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 145 pF
Ganancia de corriente contínua (hfe): 11
Paquete / Cubierta: SOT429
Búsqueda de reemplazo de transistor bipolar BU2525DW
BU2525DW Datasheet (PDF)
bu2525dw 1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M
bu2525dw.pdf
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isc Silicon NPN Power Transistor BU2525DWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
bu2525df 1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2525dx 1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT
bu2525dx.pdf
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isc Silicon NPN Power Transistor BU2525DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits oflarge screen color TV receiversABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
bu2525df.pdf
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isc Silicon NPN Power Transistor BU2525DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .