BU2525DW Todos los transistores

 

BU2525DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2525DW
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 13.5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 145 pF
   Ganancia de corriente contínua (hfe): 11
   Paquete / Cubierta: SOT429
 

 Búsqueda de reemplazo de BU2525DW

   - Selección ⓘ de transistores por parámetros

 

BU2525DW Datasheet (PDF)

 ..1. Size:58K  philips
 bu2525dw 1.pdf pdf_icon

BU2525DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticenvelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. M

 ..2. Size:214K  inchange semiconductor
 bu2525dw.pdf pdf_icon

BU2525DW

isc Silicon NPN Power Transistor BU2525DWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 7.1. Size:56K  philips
 bu2525df 1.pdf pdf_icon

BU2525DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT

 7.2. Size:57K  philips
 bu2525dx 1.pdf pdf_icon

BU2525DW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to32 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top

 


 
.