DPLS315E Todos los transistores

 

DPLS315E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DPLS315E
   Código: P315
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-emisor (Vce): 15 V
   Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: SOT223
 

 Búsqueda de reemplazo de DPLS315E

   - Selección ⓘ de transistores por parámetros

 

DPLS315E Datasheet (PDF)

 ..1. Size:158K  diodes
dpls315e.pdf pdf_icon

DPLS315E

DPLS315EDPLS315E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 300 at IC = 2A Complementary NPN Type Available (DNLS412E) Ideally Suited for Automated Assembly Proces

 9.1. Size:174K  diodes
dpls320a.pdf pdf_icon

DPLS315E

DPLS320A LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary NPN Type Available (DNLS320A) Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) Qualified to AEC-Q101 Standards fo

 9.2. Size:134K  diodes
dpls350e.pdf pdf_icon

DPLS315E

DPLS350ELOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-223 Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switchi

 9.3. Size:156K  diodes
dpls325e.pdf pdf_icon

DPLS315E

DPLS325E LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A Complementary NPN Type Available (DNLS320E) Ideally Suited for Automated Assembly Processes

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DTA114TUA | KT3151A9 | 2SD2646

 

 
Back to Top

 


 
.