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ZXT10N15DE6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXT10N15DE6
   Código: 617
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.1 W
   Tensión colector-emisor (Vce): 15 V
   Corriente del colector DC máxima (Ic): 4 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT26
     - Selección de transistores por parámetros

 

ZXT10N15DE6 Datasheet (PDF)

 ..1. Size:236K  diodes
zxt10n15de6.pdf pdf_icon

ZXT10N15DE6

ZXT10N15DE6SuperSOT15V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=15V; RSAT = 50m ; IC= 4ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6F

 8.1. Size:359K  diodes
zxt10n20de6.pdf pdf_icon

ZXT10N15DE6

ZXT10N20DE6 20V NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 DE6 Features Mechanical Data BVCEO > 20V Case: SOT26 IC = 3.5A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 19A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 55m for a Low Equivalent On-Resistance Moisture Se

 8.2. Size:350K  diodes
zxt10n50de6.pdf pdf_icon

ZXT10N15DE6

ZXT10N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case: SOT26 IC = 3A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. ICM = 6A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 75m for a Low Equivalent On-Resistance Moisture Sensitivity: Level 1

 9.1. Size:237K  diodes
zxt10p20de6.pdf pdf_icon

ZXT10N15DE6

ZXT10P20DE6SuperSOT20V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-20V; RSAT = 96m ; IC= -2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BLY28 | KSC900G | Q-00369C | KT8143M | BF883 | KTD1510 | BUR50

 

 
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