ZXT10N15DE6 datasheet, аналоги, основные параметры

Наименование производителя: ZXT10N15DE6  📄📄 

Маркировка: 617

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 1.1 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 80 MHz

Статический коэффициент передачи тока (hFE): 300

Корпус транзистора: SOT26

 Аналоги (замена) для ZXT10N15DE6

- подборⓘ биполярного транзистора по параметрам

 

ZXT10N15DE6 даташит

 ..1. Size:236K  diodes
zxt10n15de6.pdfpdf_icon

ZXT10N15DE6

ZXT10N15DE6 SuperSOT 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 F

 8.1. Size:359K  diodes
zxt10n20de6.pdfpdf_icon

ZXT10N15DE6

ZXT10N20DE6 20V NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 DE6 Features Mechanical Data BVCEO > 20V Case SOT26 IC = 3.5A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 19A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 55m for a Low Equivalent On-Resistance Moisture Se

 8.2. Size:350K  diodes
zxt10n50de6.pdfpdf_icon

ZXT10N15DE6

ZXT10N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data BVCEO > 50V Case SOT26 IC = 3A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 6A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(SAT) = 75m for a Low Equivalent On-Resistance Moisture Sensitivity Level 1

 9.1. Size:237K  diodes
zxt10p20de6.pdfpdf_icon

ZXT10N15DE6

ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-

Другие транзисторы: ZTX1149A, ZTX618, ZTX718, ZUMT617, ZUMT618, ZUMT717, ZUMT718, ZX5T2E6, 2SD313, ZXT10N20DE6, ZXT10P12DE6, ZXT10P20DE6, ZXT11N15DF, ZXT11N20DF, ZXT12N20DX, ZXT12P12DX, ZXT13N15DE6