ZXT11N20DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXT11N20DF
Código: 2N0
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 2.5 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 160 MHz
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT23
- Selección de transistores por parámetros
ZXT11N20DF Datasheet (PDF)
zxt11n20df.pdf

ZXT11N20DFSuperSOT420V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowSOT23voltage switching applications.FEATURES
zxt11n15df.pdf

ZXT11N15DFSuperSOT415V NPN SILICON LOW SATURATION TRANSISTORSUMMARYVCEO=15V; RSAT = 37m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveSOT23extremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.FEATURES
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: TN3467 | BFS91A



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