ZXT12N20DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZXT12N20DXSuperSOT4DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=20V; RSAT = 40m ; IC= 3.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

ZXT12N50DXSuperSOT4DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=50V; RSAT = 45m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSOP8

ZXT12P12DXSuperSOT4DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-12V; RSAT = 47m ; IC= -3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO

ZXT12P20DXSuperSOT4DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-20V; RSAT = 64m ; IC= -2.5ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.M

ZXT12P40DXSuperSOT4DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=-40V; RSAT = 75m ; IC= -2ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.MSO