ZXT12N20DX Specs and Replacement

Type Designator: ZXT12N20DX

SMD Transistor Code: T12N20DX

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 3.5 A

Electrical Characteristics

Transition Frequency (ft): 112 MHz

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: MSOP-8

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ZXT12N20DX datasheet

 ..1. Size:265K  diodes

 zxt12n20dx.pdf pdf_icon

ZXT12N20DX

ZXT12N20DX SuperSOT4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO... See More ⇒

 8.1. Size:261K  diodes

 zxt12n50dx.pdf pdf_icon

ZXT12N20DX

ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 45m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSOP8... See More ⇒

 9.1. Size:264K  diodes

 zxt12p12dx.pdf pdf_icon

ZXT12N20DX

ZXT12P12DX SuperSOT4 DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO... See More ⇒

 9.2. Size:260K  diodes

 zxt12p20dx.pdf pdf_icon

ZXT12N20DX

ZXT12P20DX SuperSOT4 DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 64m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. M... See More ⇒

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Detailed specifications: ZUMT718, ZX5T2E6, ZXT10N15DE6, ZXT10N20DE6, ZXT10P12DE6, ZXT10P20DE6, ZXT11N15DF, ZXT11N20DF, TIP42, ZXT12P12DX, ZXT13N15DE6, ZXT13N20DE6, ZXT13P12DE6, ZXT13P20DE6, ZXT2MA, ZXTC2061E6, ZXTC2062E6

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