ZXTN2005G Todos los transistores

 

ZXTN2005G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXTN2005G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 3 W
   Tensión colector-emisor (Vce): 25 V
   Corriente del colector DC máxima (Ic): 7 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT223
 

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ZXTN2005G Datasheet (PDF)

 ..1. Size:471K  diodes
zxtn2005g.pdf pdf_icon

ZXTN2005G

A Product Line of Diodes Incorporated GreenZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 60V Case: SOT223 IC = 7A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 6.1. Size:523K  diodes
zxtn2005zq.pdf pdf_icon

ZXTN2005G

ZXTN2005ZQ 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data Case: SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features

 6.2. Size:104K  diodes
zxtn2005z.pdf pdf_icon

ZXTN2005G

ZXTN2005Z25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = 25V : RSAT = 25m ; IC = 5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 25V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURES Extremely low equivalent on-resistance; RSAT = 2

 7.1. Size:135K  diodes
zxtn2007z.pdf pdf_icon

ZXTN2005G

ZXTN2007Z30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = 30V : RSAT = 23m ; IC = 6.0ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 30V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESSOT89 Extemely low equivalent on-resistance; RS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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