Справочник транзисторов. ZXTN2005G

 

Биполярный транзистор ZXTN2005G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: ZXTN2005G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 3 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: SOT223

 Аналоги (замена) для ZXTN2005G

 

 

ZXTN2005G Datasheet (PDF)

 ..1. Size:471K  diodes
zxtn2005g.pdf

ZXTN2005G
ZXTN2005G

A Product Line of Diodes Incorporated GreenZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 60V Case: SOT223 IC = 7A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 6.1. Size:523K  diodes
zxtn2005zq.pdf

ZXTN2005G
ZXTN2005G

ZXTN2005ZQ 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data Case: SOT89 This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features

 6.2. Size:104K  diodes
zxtn2005z.pdf

ZXTN2005G
ZXTN2005G

ZXTN2005Z25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = 25V : RSAT = 25m ; IC = 5.5ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 25V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURES Extremely low equivalent on-resistance; RSAT = 2

 7.1. Size:135K  diodes
zxtn2007z.pdf

ZXTN2005G
ZXTN2005G

ZXTN2007Z30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89SUMMARYBVCEO = 30V : RSAT = 23m ; IC = 6.0ADESCRIPTIONPackaged in the SOT89 outline this new low saturation 30V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESSOT89 Extemely low equivalent on-resistance; RS

 7.2. Size:431K  diodes
zxtn2007g.pdf

ZXTN2005G
ZXTN2005G

GreenZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 30V Case: SOT223 IC = 7A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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