2N5450 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5450

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 50

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2N5450 datasheet

 ..1. Size:143K  microelectronics
 2n5447-49 2n5450.pdf pdf_icon

2N5450

 9.1. Size:110K  motorola
 2n5457re.pdf pdf_icon

2N5450

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5457/D JFETs General Purpose 2N5457 N Channel Depletion 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit 1 2 3 Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc CASE 29 04, STYLE 5 Reverse Gate Source Voltage VGSR 25 Vdc TO 92 (TO 226AA)

 9.2. Size:129K  fairchild semi
 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf pdf_icon

2N5450

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE Source & Drain D D are interchangeable Mark 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

 9.3. Size:59K  central
 2n5457 2n5458 2n5459.pdf pdf_icon

2N5450

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

MOSTRAR MÁS

Otros transistores... 2N5440, 2N544-12, 2N544-33, 2N5447, 2N5448, 2N5449, 2N544A, 2N545, C945, 2N5451, 2N5455, 2N5456, 2N546, 2N5466, 2N5467, 2N5468, 2N5469