2N5450 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5450
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
2N5450 Transistor Equivalent Substitute - Cross-Reference Search
2N5450 Datasheet (PDF)
2n5457re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5457/DJFETs General Purpose2N5457NChannel Depletion1 DRAIN*Motorola Preferred Device3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit123DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcCASE 2904, STYLE 5Reverse GateSource Voltage VGSR 25 VdcTO92 (TO226AA)
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf
2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS
2n5457 2n5458 2n5459.pdf
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2n5457 2n5458.pdf
2N5457, 2N5458JFETs - General PurposeN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for audio and switching applications.http://onsemi.comFeatures1 DRAIN N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance3 High DC Input Resistance GATE Low Transfer and Input Capacitance
Datasheet: 2N5440 , 2N544-12 , 2N544-33 , 2N5447 , 2N5448 , 2N5449 , 2N544A , 2N545 , 2N3055 , 2N5451 , 2N5455 , 2N5456 , 2N546 , 2N5466 , 2N5467 , 2N5468 , 2N5469 .
