2N5480 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5480
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 250 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO59
Búsqueda de reemplazo de transistor bipolar 2N5480
2N5480 Datasheet (PDF)
2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf
February 20092N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007
2n5484 mmbf5484.pdf
2N5484 MMBF54842N5485 MMBF54852N5486 MMBF5486GSG TO-92SSOT-23 DDMark: 6B / 6M / 6HNOTE: Source & Drain are interchangeableN-Channel RF AmplifierThis device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value
2n5484 sst5484 2n5485 sst5485 2n5486 sst5486.pdf
2N/SST5484 SeriesVishay SiliconixN-Channel JFETs2N5484 SST54842N5485 SST54852N5486 SST5486PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)2N/SST5484 -0.3 to -3 -25 3 12N/SST5485 -0.5 to -4 -25 3.5 42N/SST5486 -2 to -6 -25 4 8FEATURES BENEFITS APPLICATIONSD Excellent High-Frequency Gain: D Wideband High Gain D High-Frequency Amplifier/Mi
2n5484 2n5485 2n5486.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5486.pdf
2N5486JFET VHF/UHF AmplifiersN-Channel DepletionFeatures Pb-Free Packages are Available*http://onsemi.com1 DRAINMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating Symbol Value Unit3GATEDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGSR 25 Vdc2 SOURCEDrain Current ID 30 mAdcForward Gate Current IG(f) 10 mAdcTotal Device Dissipation @ TC =
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050