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BCP5616 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCP5616
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 1 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de transistor bipolar BCP5616

 

BCP5616 Datasheet (PDF)

 0.1. Size:424K  diodes
bcp54ta bcp5410ta bcp5416ta bcp5416qta bcp55ta bcp5510ta bcp5516ta bcp56ta bcp5610ta bcp5616ta bcp5616tc bcp5616qta bcp5616qtc.pdf pdf_icon

BCP5616

BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > 45V, 60V & 80V Case SOT223 IC = 1A High Continuous Collector Current Case Material Molded Plastic. Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 Low Saturat

 0.2. Size:375K  diodes
bcp5616q.pdf pdf_icon

BCP5616

BCP5616Q 80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) is designed to meet the Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. AF Driver and Output Stages Mechanical Data Features Case SOT223 BVCEO > 80V Case Material Molded Plastic, Gree

 9.1. Size:200K  motorola
bcp56t1r.pdf pdf_icon

BCP5616

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCP56T1/D BCP56T1 NPN Silicon SERIES Epitaxial Transistor Motorola Preferred Device These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for MEDIUM POWER medium power surface mount applications. NPN SILICON High Cu

 9.2. Size:48K  philips
bcp54 bcp55 bcp56 3.pdf pdf_icon

BCP5616

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP54; BCP55; BCP56 NPN medium power transistors 1999 Apr 08 Product specification Supersedes data of 1997 Apr 08 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2, 4 collector AP

Otros transistores... BC856AS , BCP5210 , BCP5216 , BCP5310 , BCP5316 , BCP5510 , BCP5516 , BCP5610 , 8550 , BCX5210 , BCX5216 , BCX5310 , BCX5316 , BCX5510 , BCX5516 , BCX5610 , BCX5616 .

History: 2SD1739 | KRA322 | KRC414E | KRC285M | KRC418V | BF841 | KT657A-2

 

 
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