2N549 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N549
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar 2N549
2N549 Datasheet (PDF)
2n5490 2n5492 2n5494 2n5496.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5496.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR 2N5496TO-220Plastic PackageMedium Power Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION VALUE UNITCollector Base Voltage (Open emitter) VCBO 90 VCollector Emitter Voltage(open base) VCEO 70 VCollector Emitter Voltage(Vbe=1.5
2n5498.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain and low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switching circuits such as relay or solenoid drivers,
2n5490 2n5492 2n5494 2n5496.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
2n5490.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5490 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
2n5492.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5492 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 55V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
2n5493.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5493 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 55V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output s
2n5495.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5495 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output sta
2n5498.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain Low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
2n5491.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5491 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
2n5490 2n5492 2n5494 2n5496.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI
2n5497.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5497 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
Otros transistores... 2N5483 , 2N5487 , 2N5487-1 , 2N5487-3 , 2N5488 , 2N5488-1 , 2N5488-3 , 2N5489 , S9014 , 2N5490 , 2N5491 , 2N5492 , 2N5493 , 2N5494 , 2N5495 , 2N5496 , 2N5497 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050