2N549. Аналоги и основные параметры
Наименование производителя: 2N549
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO5
Аналоги (замена) для 2N549
- подборⓘ биполярного транзистора по параметрам
2N549 даташит
0.2. Size:237K cdil
2n5496.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR 2N5496 TO-220 Plastic Package Medium Power Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION VALUE UNIT Collector Base Voltage (Open emitter) VCBO 90 V Collector Emitter Voltage(open base) VCEO 70 V Collector Emitter Voltage(Vbe=1.5
0.3. Size:95K jmnic
2n5498.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain and low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switching circuits such as relay or solenoid drivers,
0.4. Size:118K jmnic
2n5490 2n5492 2n5494 2n5496.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
0.5. Size:58K inchange semiconductor
2n5490.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5490 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
0.6. Size:106K inchange semiconductor
2n5492.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5492 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 55V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
0.7. Size:143K inchange semiconductor
2n5493.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5493 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 55V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output s
0.8. Size:106K inchange semiconductor
2n5495.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5495 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output sta
0.9. Size:116K inchange semiconductor
2n5498.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain Low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
0.10. Size:58K inchange semiconductor
2n5491.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5491 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
0.11. Size:120K inchange semiconductor
2n5490 2n5492 2n5494 2n5496.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI
0.12. Size:106K inchange semiconductor
2n5497.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5497 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 70V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 3.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output
Другие транзисторы: 2N5483, 2N5487, 2N5487-1, 2N5487-3, 2N5488, 2N5488-1, 2N5488-3, 2N5489, 2SC2073, 2N5490, 2N5491, 2N5492, 2N5493, 2N5494, 2N5495, 2N5496, 2N5497
