MMDT2907V
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMDT2907V
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 60
V
Corriente del colector DC máxima (Ic): 0.6
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT563
Búsqueda de reemplazo de transistor bipolar MMDT2907V
MMDT2907V
Datasheet (PDF)
..1. Size:243K diodes
mmdt2907v.pdf
MMDT2907V 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT-563 Features Mechanical Data BVceo > -60V Case: SOT-563 IC = -600mA Collector Current Case Material: Molded Plastic, "Green" Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Complementary NPN Type: MMDT2222V Moisture Sensitivity: Level 1 per J-STD-020
6.1. Size:254K diodes
mmdt2907a.pdf
MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound. Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not
6.2. Size:2090K secos
mmdt2907a.pdf
MMDT2907APNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363A suffix of "-C" specifies halogen-free * Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower dissipation (0.525)REFOPCM : 0.15 W (Tamp.= 25 C).053(1.35).096(2.45).045(1.15).085(2.15)Collector current.018(0.46)ICM : -0.6 A.010(0.26).014
6.3. Size:1813K jiangsu
mmdt2907a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT2907A DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURE Complementary NPN Type available MMDT2222A MARKING: K2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 VVEBO Emitter-Bas
6.4. Size:197K lge
mmdt2907a.pdf
MMDT2907ASOT-363 Transistor(PNP)SOT-363Features Complementary NPN Type available MMDT2222A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -600 mA PC Collector Power Dissipa
6.5. Size:178K panjit
mmdt2907aq.pdf
MMDT2907AQDUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR 150 mW 60 Volt POWERVOLTAGEFEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363 Termin
6.6. Size:1108K slkor
mmdt2907a.pdf
MMDT2907APNP Silicon Epitaxial Planar Transistorfor switching and amplifier applications 6 5 4TR2TR11 2 31. Emitter 2. Base 3. Collector4. Emitter 5. Base 6. CollectorSimplified outline(SOT-363)OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 5 V Col
6.7. Size:1403K pjsemi
mmdt2907asg.pdf
MMDT2907ASG Double PNP TransistorsFeatures SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code2907AAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 60 VCBOCollector Emitter Voltage -V 60 VCEOEmitter Base Vol
6.8. Size:375K cn yangzhou yangjie elec
mmdt2907a.pdf
RoHS COMPLIANT MMDT2907ADual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2F Equivalent circuit 1 / 5 S-S3077 Yangzho
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