MMDT2907V Datasheet. Specs and Replacement

Type Designator: MMDT2907V  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 0.6 A

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT563

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MMDT2907V datasheet

 ..1. Size:243K  diodes

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MMDT2907V

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 6.1. Size:254K  diodes

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MMDT2907V

MMDT2907A 60V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Ultra-Small Surface Mount Package Case SOT363 Epitaxial Planar Die Construction Case Material Molded Plastic, Green Molding Compound. Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not... See More ⇒

 6.2. Size:2090K  secos

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MMDT2907V

MMDT2907A PNP Silicon Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF Power dissipation (0.525)REF O PCM 0.15 W (Tamp.= 25 C) .053(1.35) .096(2.45) .045(1.15) .085(2.15) Collector current .018(0.46) ICM -0.6 A .010(0.26) .014... See More ⇒

 6.3. Size:1813K  jiangsu

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MMDT2907V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT2907A DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURE Complementary NPN Type available MMDT2222A MARKING K2F MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Bas... See More ⇒

Detailed specifications: FMMT620, 2SB1412-Q, FZT1053A, HBDM60V600W, MMBT2907AT, MMDT2227, MMDT2227M, MMDT2907A, 2N5551, MMST2907A, MMSTA05, MMSTA06, MMSTA55, MMSTA56, ZDT1053, ZDT6702, ZDT6753

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