ZXTP25060BFH Todos los transistores

 

ZXTP25060BFH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXTP25060BFH

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.25 W

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 250 MHz

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar ZXTP25060BFH

 

ZXTP25060BFH Datasheet (PDF)

3.1. zxtp25020cfh.pdf Size:376K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 34m VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of th

3.2. zxtp25020bfh.pdf Size:379K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 32 m VCE(sat) < -60mV @ 1A PD = 1.25W Complementary part number ZXTN25020BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and

 3.3. zxtp25020dz.pdf Size:391K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power m

3.4. zxtp25012efh.pdf Size:327K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC(cont) = 4A RCE(sat) = 40m VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this de

 3.5. zxtp25040dfl.pdf Size:390K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25040DFL 40V, SOT23, PNP low power transistor Summary BVCEO > -40V BVECO > -3V IC(cont) = -1.5A VCE(sat) < -115mV @ 1A RCE(sat) = 82m PD = 350mW Complementary part number ZXTN25040DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features • High peak

3.6. zxtp25012ez.pdf Size:388K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power man

3.7. zxtp25040dfh.pdf Size:245K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of

3.8. zxtp25020dfh.pdf Size:516K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this

3.9. zxtp25015dfh.pdf Size:361K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25015DFH 15V, SOT23, PNP medium power transistor Summary BVCEO > -15V BVECO > -3V IC(cont) = -4A RCE(sat) = 33m VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this

3.10. zxtp25020dg.pdf Size:335K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC(cont) = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power ma

3.11. zxtp25020dfl.pdf Size:459K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m PD = 350mW Complementary part number ZXTN25020DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features • High peak c

3.12. zxtp25040dz.pdf Size:386K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of thi

3.13. zxtp25020cff.pdf Size:438K _diodes

ZXTP25060BFH
ZXTP25060BFH

ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC(cont) = -4.5A RCE(sat) = 41m VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse blocking capability of the transistor can often result in the elimination of B a

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