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FJD5553 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FJD5553
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.25 W
   Tensión colector-base (Vcb): 1050 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 14 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 45 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar FJD5553

 

FJD5553 Datasheet (PDF)

 ..1. Size:167K  fairchild semi
fjd5553.pdf

FJD5553
FJD5553

April 2008FJD5553NPN Silicon TransistorHigh Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK1Marking : J55531. Base 2. Collector 3. EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Voltage 1050 VBVCEO Collector-Emitter

 ..2. Size:334K  onsemi
fjd5553.pdf

FJD5553
FJD5553

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:196K  inchange semiconductor
fjd5553.pdf

FJD5553
FJD5553

isc Silicon NPN Power Transistor FJD5553DESCRIPTIONWide Safe Operation AreaHigh Voltage CapabilityFast-switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic BallastSwitch mode power suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 8.1. Size:209K  fairchild semi
fjd5555.pdf

FJD5553
FJD5553

May 2010FJD5555NPN Silicon TransistorFeatures High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationDPAK1Marking : J55551. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Voltage 1050 VBVCEO Collec

 8.2. Size:338K  onsemi
fjd5555tm.pdf

FJD5553
FJD5553

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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