FJL4315 Todos los transistores

 

FJL4315 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FJL4315

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 17 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO264

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FJL4315 datasheet

 ..1. Size:476K  fairchild semi
2sc5200 fjl4315.pdf pdf_icon

FJL4315

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A. TO-264 1 High Power Dissipation 150watts. High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO=250V Wide S.O.A for reliable operation. Excel

 ..2. Size:64K  fairchild semi
fjl4315.pdf pdf_icon

FJL4315

FJL4315 Audio Power Amplifier High Current Capability IC=15A High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base

 ..3. Size:222K  onsemi
fjl4315 2sc5200.pdf pdf_icon

FJL4315

DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 1. Base 2. Collector 3. Emitter Features 1 High Current Capability IC = 17 A TO-264-3LD CASE 340CA High Power Dissipation 150 W High Frequency 30 MHz High Voltage VCEO = 250 V MARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple

Otros transistores... FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , FJE5304D , FJI5603D , FJL4215 , 2SC828 , FJL6920 , FJN3303F , FJP13007 , FJP13009 , FJP3305 , FJP3307D , FJP5027N , FJP5304D .

 

 

 


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