FJL4315 Datasheet. Specs and Replacement

Type Designator: FJL4315  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 17 A

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO264

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FJL4315 datasheet

 ..1. Size:476K  fairchild semi

 2sc5200 fjl4315.pdf pdf_icon

FJL4315

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A. TO-264 1 High Power Dissipation 150watts. High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO=250V Wide S.O.A for reliable operation. Excel... See More ⇒

 ..2. Size:64K  fairchild semi

 fjl4315.pdf pdf_icon

FJL4315

FJL4315 Audio Power Amplifier High Current Capability IC=15A High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base... See More ⇒

 ..3. Size:222K  onsemi

 fjl4315 2sc5200.pdf pdf_icon

FJL4315

DATA SHEET www.onsemi.com NPN Epitaxial Silicon Transistor FJL4315, 2SC5200 1. Base 2. Collector 3. Emitter Features 1 High Current Capability IC = 17 A TO-264-3LD CASE 340CA High Power Dissipation 150 W High Frequency 30 MHz High Voltage VCEO = 250 V MARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple... See More ⇒

Detailed specifications: FJD3305H1, FJD5304D, FJD5553, FJD5555, FJE3303, FJE5304D, FJI5603D, FJL4215, 2SC828, FJL6920, FJN3303F, FJP13007, FJP13009, FJP3305, FJP3307D, FJP5027N, FJP5304D

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