FJP5304D Todos los transistores

 ..1. Size:590K  fairchild semi
 fjp5304d.pdf

July 2008 FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-220 1 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25 C unless

 ..2. Size:299K  onsemi
 fjp5304d.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:66K  fairchild semi
 fjp5321.pdf

FJP5321 High Voltage and High Reliability High speed Switching Wide Safe Operating Area TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Curr

 9.2. Size:70K  fairchild semi
 fjp5355.pdf

FJP5355 High Voltage Switch Mode Application High Speed Switching Very Low Switching Losses Very Low Operating Temperature Wide RBSOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 440 V VEBO Emitte