FJP5555 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJP5555
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-base (Vcb): 1050 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 14 V
Corriente del colector DC máxima (Ic): 5 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO220
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FJP5555 datasheet
fjp5555.pdf
January 2010 FJP5555 NPN Silicon Transistor Features High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Vol
fjp5555.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjp5554.pdf
October 2008 FJP5554 High Voltage Fast Switching Transistor Features Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Cur
Otros transistores... FJN3303F , FJP13007 , FJP13009 , FJP3305 , FJP3307D , FJP5027N , FJP5304D , FJP5554 , D667 , FJPF13007 , FJPF13009 , FJPF3305 , FJPF5021 , FJPF5027 , KSB834W , KSC5026M , KSC5305D .
History: BC449A
History: BC449A
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