FJP5555 Datasheet, Equivalent, Cross Reference Search
Type Designator: FJP5555
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 1050 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 14 V
Maximum Collector Current |Ic max|: 5 A
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
FJP5555 Transistor Equivalent Substitute - Cross-Reference Search
FJP5555 Datasheet (PDF)
fjp5555.pdf
January 2010FJP5555NPN Silicon TransistorFeatures High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 1050 V VCEO Collector-Emitter Vol
fjp5555.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjp5554.pdf
October 2008FJP5554High Voltage Fast Switching TransistorFeatures Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast ApplicationTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum RatingsSymbol Parameter Value UnitsVCBO Collector-Base Voltage 1050 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 15 VIC Collector Cur
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
