FJPF13009 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJPF13009 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 12 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO220F
📄📄 Copiar
Búsqueda de reemplazo de FJPF13009
- Selecciónⓘ de transistores por parámetros
FJPF13009 datasheet
fjpf13009.pdf
December 2007 FJPF13009 NPN Silicon Transistor High Voltage Switch Mode Application High Voltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* TC = 25 C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collec
fjpf13009.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjpf13009h1tu fjpf13009h2tu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjpf13007.pdf
FJPF13007 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power Supply TO-220F 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO E
Otros transistores... FJP13009, FJP3305, FJP3307D, FJP5027N, FJP5304D, FJP5554, FJP5555, FJPF13007, BDT88, FJPF3305, FJPF5021, FJPF5027, KSB834W, KSC5026M, KSC5305D, KSC5305DF, KSC5338D
Parámetros del transistor bipolar y su interrelación.
History: KRA762E | 2SC3434
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827





