FJPF13009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FJPF13009
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO220F

Búsqueda de reemplazo de transistor bipolar FJPF13009

FJPF13009 Datasheet (PDF)

..1. Size:134K fairchild semi
fjpf13009.pdf

December 2007FJPF13009NPN Silicon TransistorHigh Voltage Switch Mode Application High Voltage Capability High Switching Speed Suitable for Motor Control and Switching Mode Power Supply TO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collec

..2. Size:265K onsemi
fjpf13009.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:265K onsemi
fjpf13009h1tu fjpf13009h2tu.pdf

6.1. Size:59K fairchild semi
fjpf13007.pdf

FJPF13007High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-220F11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO E

6.2. Size:215K onsemi
fjpf13007.pdf