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ZUMTS17N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZUMTS17N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 11 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3200 MHz
   Capacitancia de salida (Cc): 0.8 pF
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: SOT323
 
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ZUMTS17N Datasheet (PDF)

 ..1. Size:215K  diodes
 zumts17n.pdf pdf_icon

ZUMTS17N

A Product Line ofDiodes IncorporatedZUMTS17NNPN RF TRANSISTOR IN SOT323 Features Mechanical Data 3.2GHz unity gain for RF switching applications Case: SOT323 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Case Material: molded plastic, "Green" molding compound. UL Flammability Classification Rating 94V-0 Halogen and Antimony Free. Green Devic

 7.1. Size:24K  diodes
 zumts17 zumts17h.pdf pdf_icon

ZUMTS17N

SOT323 NPN SILICON PLANARZUMTS17RF TRANSISTORSZUMTS17HISSUE 1 DECEMBER 1998PARTMARKING DETAIL ZUMTS17 - T4ZUMTS17H - T4HABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 25 VCollector-Emitter Voltage VCEO 15 VEmitter-Base Voltage VEBO 2.5 VPeak Pulse Current ICM 50 mAContinuous Collector Current IC 25 mAPower Dissipation at Tamb=

 9.1. Size:18K  diodes
 zumts20.pdf pdf_icon

ZUMTS17N

SOT323 NPN SILICON PLANARZUMTS20VHF TRANSISTORISSUE 1 DECEMBER 1998 PARTMARKING DETAIL T3ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 20 VEmitter-Base Voltage VEBO 4VPeak Pulse Current ICM 25 mAContinuous Collector Current IC 25 mAPower Dissipation at Tamb=25C Ptot 330 mWOperating and Stora

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