ZUMTS17N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZUMTS17N  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.33 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 11 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3200 MHz

Capacitancia de salida (Cc): 0.8 pF

Ganancia de corriente contínua (hFE): 56

Encapsulados: SOT323

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ZUMTS17N datasheet

 ..1. Size:215K  diodes
 zumts17n.pdf pdf_icon

ZUMTS17N

A Product Line of Diodes Incorporated ZUMTS17N NPN RF TRANSISTOR IN SOT323 Features Mechanical Data 3.2GHz unity gain for RF switching applications Case SOT323 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Case Material molded plastic, "Green" molding compound. UL Flammability Classification Rating 94V-0 Halogen and Antimony Free. Green Devic

 7.1. Size:24K  diodes
 zumts17 zumts17h.pdf pdf_icon

ZUMTS17N

SOT323 NPN SILICON PLANAR ZUMTS17 RF TRANSISTORS ZUMTS17H ISSUE 1 DECEMBER 1998 PARTMARKING DETAIL ZUMTS17 - T4 ZUMTS17H - T4H ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 2.5 V Peak Pulse Current ICM 50 mA Continuous Collector Current IC 25 mA Power Dissipation at Tamb=

 9.1. Size:18K  diodes
 zumts20.pdf pdf_icon

ZUMTS17N

SOT323 NPN SILICON PLANAR ZUMTS20 VHF TRANSISTOR ISSUE 1 DECEMBER 1998 PARTMARKING DETAIL T3 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4V Peak Pulse Current ICM 25 mA Continuous Collector Current IC 25 mA Power Dissipation at Tamb=25 C Ptot 330 mW Operating and Stora

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