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BC846BM3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC846BM3T5G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.265 W
   Tensión colector-emisor (Vce): 65 V
   Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT723
 

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BC846BM3T5G Datasheet (PDF)

 ..1. Size:96K  onsemi
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BC846BM3T5G

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

 0.1. Size:100K  onsemi
nsvbc846bm3t5g.pdf pdf_icon

BC846BM3T5G

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

 6.1. Size:102K  onsemi
bc846bm3-d.pdf pdf_icon

BC846BM3T5G

BC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model: >4000 VMachine Model: >400 Vhttp://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 65 Vdc2Collector-Base Voltage VCBO 80 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollec

 6.2. Size:100K  onsemi
bc846bm3.pdf pdf_icon

BC846BM3T5G

BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI

Otros transistores... BC807-16L , BC807-25L , BC807-40L , BC817-16L , BC817-25L , BC817-40L , BC846AL , BC846BL , TIP42C , BC846BPDW1 , BC846C , BC847AL , BC847BDW1 , BC847BL , BC847BP , BC847BPDXV6 , BC847CDXV6 .

History: TV57A | 2SC1802 | MJ4240 | BD266B | BFR89 | SC257VI

 

 
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