BC846BM3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC846BM3T5G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.265 W
Tensión colector-emisor (Vce): 65 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT723
Búsqueda de reemplazo de transistor bipolar BC846BM3T5G
BC846BM3T5G Datasheet (PDF)
bc846bm3t5g nsvbc846bm3t5g.pdf
BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI
nsvbc846bm3t5g.pdf
BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI
bc846bm3-d.pdf
BC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model: >4000 VMachine Model: >400 Vhttp://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 65 Vdc2Collector-Base Voltage VCBO 80 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollec
bc846bm3.pdf
BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BD307B | NA32MG | 2SA447 | 2N1490
History: BD307B | NA32MG | 2SA447 | 2N1490
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050