BCW70L
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW70L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-emisor (Vce): 45
V
Corriente del colector DC máxima (Ic): 0.1
A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 215
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar BCW70L
BCW70L
Datasheet (PDF)
0.1. Size:410K motorola
bcw69lt1 bcw70lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCW69LT1/DGeneral Purpose TransistorsBCW69LT1PNP SiliconBCW70LT1COLLECTOR313BASE12 2EMITTERCASE 31808, STYLE 6SOT23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 45 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 100
0.2. Size:265K onsemi
bcw70lt1-d.pdf
BCW70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO -45 VdcEmitter-Base Voltage VEBO -5.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacteristic
0.3. Size:227K onsemi
bcw70lt1g.pdf
BCW70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO -45 VdcEmitter-Base Voltage VEBO -5.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacteristic Sy
0.4. Size:411K willas
bcw70lt1.pdf
FM120-M BCW69LT1WILLASTHRUBCW70LT1General Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.PNP SiliconSOD-123H LoFeatruesw profile surface mounted applica
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