BSP19A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP19A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-emisor (Vce): 350 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT223 TO261
Búsqueda de reemplazo de transistor bipolar BSP19A
BSP19A Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSP19AT1/DBSP19AT1NPN SiliconBSP20AT1Epitaxial TransistorMotorola Preferred DevicesThis family of NPN Silicon Epitaxial transistors is designed for use as a generalpurpose amplifier and in switching applications. The device is housed in the SOT-223package which is designed for medium power surface mount applications
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BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA
bsp19at1g.pdf
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BSP19AT1G,NSVBSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thehttp://onsemi.comdevice is housed in the SOT-223 package which is designed formedium power surface mount applications.SOT-223 PACKAGEFeaturesNPN SILICON HIGH VOLTAGE High VoltageTRA
bsp19at1.pdf
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BSP19AT1GNPN Silicon ExpitaxialTransistorThis family of NPN Silicon Epitaxial transistors is designed for useas a general purpose amplifier and in switching applications. Thedevice is housed in the SOT-223 package which is designed forhttp://onsemi.commedium power surface mount applications.FeaturesSOT--223 PACKAGE High Voltage: V(BR)CEO of 250 and 350 VNPN SILICON HIGH
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